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The TIP35C NPN Power Transistor is manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage
TIP35 Pinout
TIP35 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Base |
| 2 | Collector |
| 3 | Emitter |
TIP35 Key Features
- 25 A Collector Current
- Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V
- Excellent DC Gain — hFE = 40 Typ @ 15 A
- High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 1.0 A, f = 1.0 M
- Type Designator: TIP35C
- Material of Transistor: Si
- Polarity: NPN
- Maximum Emitter-Base Voltage |Veb|: 5 V
Specification
| Ic (mA) | Pd (mW) | Vce (max) | Vcb | hfe | @Ic | FT (MHz) |
|---|---|---|---|---|---|---|
| 25 | 25 | 100 | 100 | 15-75 | 15000 | 3 |
TIP35 Equivalent/Alternate:
- TIP100, TIP101, TIP102, TIP105, TIP106, TIP107, TIP110, TIP36C
Application
- General purpose
- Audio amplifier
You can download this datasheet for TIP35C NPN Power Transistor from the link given below:
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