In this project
The TIP112 is silicon Epitaxial-Base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intended for use in medium power linear and switching applications
TIP112 Pinout
TIP112 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Base |
| 2 | Collector |
| 3 | Emitter |
| 4 | Case (Collector) |
TIP112 Key Features
- High DC Current Gain —
- hFE = 2500 (Typ) @ IC = 1.0 Adc
- Collector–Emitter Sustaining Voltage — @ 30 mAdc
- VCEO(sus) = 100 Vdc (Min) — TIP112
- Low Collector–Emitter Saturation Voltage —
- VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc
- Monolithic Construction with Built–in Base–Emitter Shunt Resistors
- TO–220AB Compact Package
- Type Designator: TIP112
- Material of Transistor: Si
- Polarity: NPN
Specification
| Ic (mA) | Pd (mW) | Vce (max) | Vcb | hfe | @Ic |
|---|---|---|---|---|---|
| 2 | 50 | 100 | 100 | 1000 | 1000 |
TIP112 Equivalent/Alternate:
- TIP100, TIP101, TIP102, TIP105, TIP106, TIP107, TIP117
Application
- Darlington
- General–purpose amplifier
- Low–Speed Switching
You can download this datasheet for TIP112 NPN Power Darlington Transistor from the link given below:
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