In this project
IRF250 30A 200V N-Channel Power MOSFET is N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits
IRF250 Pinout
IRF250 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Source |
| 3 | Drain (Flange) |
IRF250 Key Features
- 30A, 200V
- RDS(ON) = 0.085Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Type Designator: IRF250
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
IRF250 Specification
| Id (A) | Pd (W) | Vds (max) | Rds (on) | Vgs (max) |
|---|---|---|---|---|
| 30 | 150 | 200 | 0.085 | 20 |
IRF250 Equivalent/Alternative
- IRF034, IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201
Application
- Switching Regulators
- Switching Converters
- Motor Drivers
- Relay Drivers
You can download this datasheet for IRF250 30A 200V N-Channel Power MOSFET from the link given below:
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