Datasheets

1,864 projects

The BD708 is silicon Epitaxial-Base PNP power transistors in Jedec TO-220 plastic package. They are intended for use in power linear and swi…

The BD682 is silicon epitaxial-base PNP power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 package. They are i…

IRFR420 2.4A 400V N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technol…

IRFR320 3.1A 400V N-Channel Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device de…

IRF3315 27A 150V N-Channel Power MOSFET Rectifier is utilize to advanced processing techniques to achieve extremely low on-resistance per si…

BD705 NPN power transistor is lot of variations for robust device performance and reliable operation designed for use in power linear and sw…

IRFP250 33A 200V N-Channel Power MOSFET is advanced line of power MOSFET transistors. The efficient geometry and unique processing of this l…

The BD680 is silicon epitaxial-base PNP power transistor in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. The…

IRFBG30 3.1A 1000V N-Channel Power MOSFET provide the designer With the best combination of fast switching, ruggedized device design, low on…

IRF510 5.6A 100V N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and gua…

The BD681 is silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. Th…

The MJL21194 NPN Power Transistor is utilize Perforated Emitter technology and are specifically designed for high power audio output, disk h…

The BD678 is silicon epitaxial-base PNP power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. Th…

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