2732A 32K 250ns EPROM - Datasheet
The M2732A is a 32,768 bit UV erasable and electrically programmable memory EPROM. It is organized as 4,096 words by 8 bits. The M2732A with…
The M2732A is a 32,768 bit UV erasable and electrically programmable memory EPROM. It is organized as 4,096 words by 8 bits. The M2732A with…
The SST49LF080A flash memory device is designed to interface with the LPC bus for PC and Internet Appliance application in compliance with I…
BR86 600V 8A Bridge Rectifier has a High reverse voltage of up to 1000V, overload rating is a 125 amperes peak. BR86 has a single-phase, hal…
The SST49LF160C flash memory device is designed to interface with host controllers (chipsets) that support a low-pin-count (LPC) interface f…
The AT28C64 is a low-power, high-performance 8,192 words by 8-bit nonvolatile electrically erasable and programmable read-only memory with p…
The 29F040B is a 4 Mbit, 5.0 volt-only Flash memory organized as 524,288 Kbytes of 8 bits each. The 512 Kbytes of data are divided into eigh…
The BD435 is silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intended for use in medium power linear and switc…
The 3P4MH 3A Thyristor is P-gate fully diffused mold SCRs with an average on-current of 3 A. The repeat peak off-voltages and reverse voltag…
The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is…
The 29C040A is a 5-volt-only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory are organized as 5…
IRF4905 74A 55V P-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. This benef…
The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly…
The 29C512 is a 5-volt only in-system Flash programmable and erasable read-only memory (PEROM). Its 512K of memory is organized as 65,536 wo…
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