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BUZ60 5.5A 400V is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
BUZ60 Pinout
BUZ60 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
BUZ60 Key Features
- 5.5A, 400V
- RDS(ON) = 1.000Ω
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
- Type Designator: BUZ60
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
Specification
| Id (mA) | Pd | Vds (max) | Vgs | Rds |
|---|---|---|---|---|
| 5.5 | 75 | 400 | 0 | 1 |
Application
- Switching Regulators
- Switching Converters
- Motor Drivers
- Relay Drivers
You can download this datasheet for BUZ60 5.5A 400V N-Channel Power MOSFET from the link given below:
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