In this project
BAT41 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode featuring very low turn-on voltage and fast switching. This device has integrated protection against excessive voltage such as electrostatic discharges.
BAT41 Features
- Very low turn-on voltage
- Fast switching.
BAT41 Specification
| Mfr Package Description | DO-35, 2 PIN |
| Diode Type | RECTIFIER DIODE |
| Diode Element Material | SILICON |
| Forward Voltage-Max (VF) | 1.0 V |
| Non-rep Pk Forward Current-Max | 0.75 A |
| Operating Temperature-Min | -65.0 Cel |
| Operating Temperature-Max | 125.0 Cel |
| Output Current-Max | 0.1 A |
| Power Dissipation-Max | 0.1 W |
| Rep Pk Reverse Voltage-Max | 100.0 V |
| Reverse Current-Max | 0.1 µA |
You can download this datasheet for BAT41 Schottky Barrier Diode from the link given below:
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