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2N6059 NPN Power Darlington Transistor - Datasheet

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2N6059 Datasheet

The 2N6059 is a silicon Epitaxial-Base NPN transistor in a monolithic Darlington configuration mounted in a Jedec TO-3 metal case. It is intended for use in power linear and low-frequency switching applications.

What is Darlington Transistor?

A Darlington transistor is also known as a Darlington pair is an electronics component made via the combination of two PNP or NPN BJTs (Bipolar Junction Transistor) connected in such a way that it allows a very high amount of current gain. Darlington pair is simply used in many applications where switching or amplification is crucial.

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2N6059 Pinout

2N6059 Pin Configuration

Pin NoPin Name
1Base
2Emitter
3Collector

2N6059 Key Features

  • Built-in Base-Emitter Shunt Resistors
  • High DC current gain hFE = 750 (Min) @ IC = 6A
  • Collector-Emitter Sustaining Voltage VCEO(SUS)= 100V(Min)
  • Type Designator: 2N6059
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Emitter-Base Voltage |Veb|: 10 V

Specification

Ic (mA)Pd (mW)Vce (max)Vcb hfeFT (MHz)
121501001007504

2N6059 Equivalent/Alternate:

  • 2N60, 2N600, 2N6000, 2N6001, 2N6002, 2N6052

Application

  • General Purpose Amplifier
  • Low Frequency Switching

You can download this datasheet for 2N6059 NPN Power Darlington Transistor from the link given below:

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