In this project
1N5822 is a Schottky barrier rectifier diode mounted in an axial lead epoxy case using metal to silicon junction to yield forward voltage drop and instantaneous reverse recovery times.
1N5822 Features
- Extremely Low Forward Voltage
- Low Stored Charge
- Majority Carrier Conduction
- Low Power Loss/High Efficiency
- These are Pb−Free Devices
1N5822 Specification
| Mfr Package Description | DO-201A, 2 PIN |
| Diode Type | RECTIFIER DIODE |
| Diode Element Material | SILICON |
| Forward Voltage-Max (VF) | 0.7 V |
| Non-rep Pk Forward Current-Max | 150.0 A |
| Operating Temperature-Min | -55.0 Cel |
| Operating Temperature-Max | 150.0 Cel |
| Output Current-Max | 3.0 A |
| Rep Pk Reverse Voltage-Max | 40.0 V |
| Reverse Current-Max | 1500.0 µA |
Application
- Low voltage
- High frequency inverters
- Reverse polarity protection
You can download this datasheet for 1N5822 Schottky Barrier Diode from the link given below:
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